Sumitomo Electric Industries Co., Ltd. has produced a SiC MOSFET with a V-shaped trench at the gate portion, and announced it at ICSC International Society "ICSCRM 2013" (held in Miyazaki, Japan from September 29th to October 4th, 2013). Related speeches. The groove of a common channel type MOSFET in the gate portion is perpendicular to the surface of the element, and the trench of the prototype of Sumitomo Electric Industries is V-shaped, and the side surface of the trench is inclined to the surface of the element.

The V-shaped groove is characterized by keeping the threshold voltage at a practical level while reducing the on-resistance. In SiC MOSFETs, the increase in threshold voltage and the reduction in on-resistance are usually in a trade-off relationship. When a design that can increase the threshold voltage is used, the carrier mobility decreases and the on-resistance increases. The side of the V-shaped groove is a crystal surface that is easy to increase the carrier mobility, so it is easy to reduce the on-resistance.

In addition, V-shaped trenches are easier to fabricate than ordinary trench SiC MOSFETs. Because "it is easy to process a neat V-shaped groove by thermochemical etching" (Smith Electric Industrial's SiC technician). The common channel type is the use of ion etching to form the trench, so it is difficult to process the trench into a desired shape.

At ICSCRM 2013, Sumitomo Electric announced the characteristics of a device with a withstand voltage of 730V and a withstand voltage of 1.7kV. The threshold voltage of the 730V product is 2.4V and the on-resistance is 3.6mΩcm2 (speech number: Tu-P-45). The 1.7kV product has a threshold voltage of 2.6V and an on-resistance of 3.5mΩcm2 (speech number: We-1A-5).

In addition, in order to reduce the effect of electric field concentration on the bottom surface of the V-shaped groove, a 1.7 kV product is provided with a p-type layer under the V-shaped groove. (Reporter: Neejin, "Nikkei Electronics")

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