Single crystal of barium ferrite is first integrated into silicon wafers

Researchers at North Carolina State University have made a groundbreaking advancement by successfully integrating a single-crystal material known as bismuth ferrite (BFO) onto a silicon wafer. This achievement marks a significant step toward the development of next-generation smart devices that can sense, process, and respond to data more efficiently—right on the same chip. Bismuth ferrite is unique because it exhibits both ferromagnetic and ferroelectric properties. This means it can be magnetized using an electric current, making it highly versatile for applications such as magnetic storage, advanced sensors, and spintronics. The ability to control its magnetic state with electricity opens up new possibilities for low-power, high-performance electronic systems. In this study, the researchers demonstrated that by carefully integrating BFO onto a silicon substrate, they could minimize charge leakage between the two materials. They also discovered that when BFO is combined with a lanthanum strontium manganite (LSMO) electrode during epitaxial growth, it can be controlled with as little as 4 volts—an energy level compatible with modern integrated circuits. This is a major breakthrough, as traditional methods often require higher voltages or magnetic fields, which are inefficient and can cause damage to the device. Moreover, the team found that even a weak external magnetic field can switch off the magnetic poles of barium ferrite. Importantly, this process doesn’t generate heat, making it ideal for applications where thermal management is critical, such as in compact or high-density electronics. Professor Jay Narayan, a leading expert in materials science at NC State, highlighted the significance of the research: “This work enables us to create smarter devices that can handle data faster and more efficiently. By performing sensing, processing, and responding all on the same chip, we eliminate the need for data to travel across different components, which reduces latency and power consumption.” The project was supported by the U.S. National Research Council and the Army Research Office. The findings were recently published in the online edition of *Nano Communications*.

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